Search results for "DC bias"
showing 9 items of 9 documents
Direct observation of polar nanostructures in PLZT ceramics for electrooptic applications
2004
ABSTRACTTransparent Pb1-yLay(Zr1-xTix)1-y/4O3(PLZT, y=0.0975, x=0.35) ceramics prepared via hot pressing techniques were studied via piezoelectric force microscopy (PFM). Clear piezoelectric contrast is observed in a cubic relaxor phase indicating spatial distribution of polarization with an average cluster size of about 50 nm. The irregular polarization pattern is associated with the formation of a glassy state, where random electric and stress fields are responsible for the disruption of the long-range ferroelectric order. Local poling of the ceramics resulted in the formation of a stable micron-size domain that could be continuously switched under varying dc bias (local hysteresis loop).…
Selective growth and optical properties of sputtered BaTiO3films
2000
we report the growth of BaTiO 3 thin films by standard Radio Frequency sputtering. Without any in situ or post annealing, these polycristalline films are oriented relative to the substrate even when it is amorphous. We show that this preferential orientation may be monitored using a DC Bias during the film growth. At room temperature, cubic films of (100) and (110) orientations have been achieved, on fused silica substrate. Some optical waveguiding properties of these films have been studied. The resulting film index is 2.26 and the optical step index at the substrate interface is sharp. This allows the use of standard RF sputtering techniques to monitor oriented BaTiO 3 films for linear op…
Dynamic stabilization of the magnetic field surrounding the neutron electric dipole moment spectrometer at the Paul Scherrer Institute
2014
The Surrounding Field Compensation (SFC) system described in this work is installed around the four-layer Mu-metal magnetic shield of the neutron electric dipole moment spectrometer located at the Paul Scherrer Institute. The SFC system reduces the DC component of the external magnetic field by a factor of about 20. Within a control volume of approximately 2.5m x 2.5m x 3m disturbances of the magnetic field are attenuated by factors of 5 to 50 at a bandwidth from $10^{-3}$ Hz up to 0.5 Hz, which corresponds to integration times longer than several hundreds of seconds and represent the important timescale for the nEDM measurement. These shielding factors apply to random environmental noise f…
Adiabatic quantum pumping, magnification effects and quantum size effects of spin-torque in magnetic tunnel junctions
2010
We study the adiabatic quantum pumping and quantum size effects of spin-torque in a magnetic tunnel junction within a scattering matrix approach. Quantum size effects are predicted in the presence of a dc bias as a function of the thickness of the normal metal layer inserted between two magnetic layers and of the fixed magnetic layer. In the presence of ac voltages, the results for the spin-torque show a peculiar magnification effect and advantages of spin-torque pumping in actual devices are also discussed.
Pumping of single electrons with a traveling wave
1995
Abstract We describe the operation and performance of a one-dimensional chain of small metallic islands whose potentials are modulated in a wave-like manner. The sinusoidal voltages, applied to the gate electrodes, carry individual charges coherently through the array. In practice, the wave-like potential is induced on the gates by a surface acoustic wave (SAW) traveling on a piezoelectric substrate. The resulting transfer of charges should produce a DC current I = ± ef through the chain, where f is the frequency of the wave and the sign ofthe current depends on the value of the common DC bias of the islands as well as on the direction of the wave propagation. We observe, however, a much sm…
Microwave induced co-tunneling in single electron tunneling transistors
2002
Abstract The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics. The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage fixed at maximum Coulomb blockade. With the microwave signal applied to one side of the t…
Comment on "Dynamics and properties of waves in a modified Noguchi electrical transmission line"
2016
A recent paper [Phys. Rev. E 91, 022925 (2015)PRESCM1539-375510.1103/PhysRevE.91.022925] presents the derivation of the nonlinear equation modeling envelope waves in a specific case of band passed filter discrete nonlinear electrical transmission line (NLTL), called "A modified Noguchi electrical transmission line" according to the authors. Using the reductive perturbation approach in the semidiscrete approximation, they showed that the modulated waves propagating in this NLTL are described by the ordinary nonlinear Schrodinger (NLS) equation. On the basis of their results, the authors claimed that all previous works on the band passed filter NLTL, which considered the vanishing of the dc c…
DC Bias Abatement in Dual Active Bridge Converter using Covalent Active and Passive Components
2022
The Dual Active Bridge (DAB) converter is the most attractive bidirectional DC-DC converter topology in the distribution network. However, the DC bias is the most common issue in the dual active bridge converter due to the sudden change in internal or external phase shift angles to regulate the power signal. Consequently, it will increase conduction losses, a core saturation problem of High-Frequency Transformer (HFT), and loss of Zero Voltage Switching (ZVS) operation. Therefore, this paper presents the DC bias abatement in the DAB converter using covalent active and passive components to alleviate these problems. The proposed method employs the series capacitor in the windings of HFT as t…
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
2018
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.